Binary metal liner layers

Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide...

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Bibliographic Details
Main Authors HA, TAE-HONG, TANG, XIANMIN, CHEN, FENG, WU, ZHI-YUAN, SHEN, GANG, SABBA, YIZHAK, XU, WEN-JING
Format Patent
LanguageChinese
English
Published 01.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.
Bibliography:Application Number: TW202110116217