Method and apparatus for atomic layer etching

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, an...

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Bibliographic Details
Main Authors PARK, SANG-JUN, CHO, BYUNGUL, KWON, JUN-HYUCK, AN, JONG-KI, JIN, KWANG-SEON, HAN, TIAN-HAO
Format Patent
LanguageChinese
English
Published 01.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.
Bibliography:Application Number: TW202110130334