Film forming apparatus and film forming method

• Main Authors: OKURA, SHIGEYUKI, SORITA, YUTA, HARA, MASAMICHI, SAITO, TETSUYA, FURUYA, YUICHI
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A film forming apparatus for forming a film on a substrate includes a chamber, a substrate support, a gas supply unit, a gas injection member, and a filter. The substrate support is disposed in the chamber to support a substrate placed thereon and maintain the substrate at a film forming temperature. The gas supply unit is configured to supply a gas containing a film forming source gas. The gas injection member is disposed to face the substrate support and has a gas injection area for injecting the gas containing the film forming source gas supplied from the gas supply unit. Further, the filter is disposed to cover at least the gas injection area on a surface of the gas injection member opposite to a surface facing the substrate support, the filter being configured to trap particles in the gas containing the film forming source gas while the gas passes therethrough.