Bonding wafer structure and method of manufacturing the same

A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded on the bonding layer, wherein carbon surface of the SiC layer is in direct contact with the bondi...

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Bibliographic Details
Main Authors SHIH, YING-RU, LO, HUNGANG, WU, WEI-LI
Format Patent
LanguageChinese
English
Published 01.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded on the bonding layer, wherein carbon surface of the SiC layer is in direct contact with the bonding layer. The BPD (basal plane dislocation) of the SiC layer is 1,000 ea/cm2 to 20,000 ea/cm2, TTV (total thickness variation) of the SiC layer is more than that of the support substrate, and a diameter of the SiC layer is equal to or less than that of the support substrate. The bonding wafer structure has TTV of less than 10 [mu]m, Bow of less than 30 [mu]m, and Warp of less than 60 [mu]m.
Bibliography:Application Number: TW20209125054