Module configurations for integrated III-nitride devices

• Main Authors: RHODES, DAVID MICHAEL, PARIKH, PRIMIT, WU, YI-FENG, YEA, SUNG HAE
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2022
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.