Cutting method for SiC substrate suppressing the breakage and chipping of the cutting blade, and suppressing the consumption of the cutting blade when cutting the SiC substrate

The present invention provides a cutting method for a SiC substrate, which can suppress the breakage and chipping of the cutting blade, and can also suppress the consumption of the cutting blade when cutting the SiC substrate. The cutting method of the SiC substrate is a method of cutting the SiC su...

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Bibliographic Details
Main Authors HIRAIWA, SUGURU, OHNO, KATSUTOSHI
Format Patent
LanguageChinese
English
Published 16.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Summary:The present invention provides a cutting method for a SiC substrate, which can suppress the breakage and chipping of the cutting blade, and can also suppress the consumption of the cutting blade when cutting the SiC substrate. The cutting method of the SiC substrate is a method of cutting the SiC substrate (200) with a cutting blade (21). In the method of cutting the SiC substrate, the cutting edge (212) of the cutting blade (21) is cutting the SiC substrate (200) held by the chuck table (10) while undergoing ultrasonic vibration in the radial direction. This cutting blade (21) is made of a combination of sintered tungsten carbide and cobalt through fixing and grinding with abrasive grains.
Bibliography:Application Number: TW202110112348