CMP polishing liquid and polishing method

One aspect of the present disclosure provides a CMP polishing liquid that comprises abrasive grains and a cationic polymer, wherein the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. Further, this CMP polishing liquid ma...

Full description

Saved in:
Bibliographic Details
Main Authors OTSUKA, YUYA, WU, JENNA, OOUCHI, MAYUMI, MINAMI, HISATAKA, KOBAYASHI, SHINGO, TAKAHASHI, HISATO
Format Patent
LanguageChinese
English
Published 16.10.2021
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:One aspect of the present disclosure provides a CMP polishing liquid that comprises abrasive grains and a cationic polymer, wherein the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. Further, this CMP polishing liquid may further comprise at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method that comprises a step for polishing a target material with the use of the CMP polishing liquid.
Bibliography:Application Number: TW202110105256