Process for fabricating an image sensor

The invention relates to a process for fabricating an image sensor, comprising: - providing a receiver substrate (1) comprising a base substrate (10) and an active layer comprising pixels (11), each pixel comprising a doped region (12) for collecting the electric charges generated in the pixel, said...

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Bibliographic Details
Main Authors DELPY, ALAIN, SCHWARZENBACH, WALTER, HERISSON, DAVID
Format Patent
LanguageChinese
English
Published 16.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a process for fabricating an image sensor, comprising: - providing a receiver substrate (1) comprising a base substrate (10) and an active layer comprising pixels (11), each pixel comprising a doped region (12) for collecting the electric charges generated in the pixel, said receiver substrate (1) being devoid of metal interconnections, - providing a donor substrate (2) comprising a weakened zone (200) delimiting a monocrystalline semiconductor layer (201), - bonding the donor substrate (2) to the receiver substrate (1), - detaching the donor substrate (2) along the weakened zone (200) so as to transfer the semiconductor layer (201) to the receiver substrate (1), - implementing a finishing treatment on the transferred semiconductor layer (201), said finishing treatment comprising (i) thinning of the transferred layer by sacrificial oxidation followed by chemical etching and (ii) smoothing of the transferred semiconductor layer by means of at least one rapid anneal.
Bibliography:Application Number: TW202110101307