Semiconductor device including standard cells with combined active region
A semiconductor device includes a first and a second power rails extending in a row direction, a third power rail extending in the row direction between the first and second power rail, and a first cell arranged between the first second power rails. A cell height of the first cell in a column direct...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
01.08.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a first and a second power rails extending in a row direction, a third power rail extending in the row direction between the first and second power rail, and a first cell arranged between the first second power rails. A cell height of the first cell in a column direction perpendicular to the row direction is equal to a pitch between the first and second power rails. The semiconductor device also includes a second cell arranged between the first and third power rails. A cell height of the second cell in the column direction is equal to a pitch between the first and third power rails. A first active region of the first cell includes a first width in the column direction greater than a second width, in the column direction, of a second active region in the second cell. |
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Bibliography: | Application Number: TW202110101148 |