Semiconductor device and method for manufacturing semiconductor device

The semiconductor device according to the present invention comprises: a main part which includes a semiconductor substrate, a first type first cladding layer that is provided on the semiconductor substrate and is one of n-type or p-type, an active layer provided on the first cladding layer, and a s...

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Bibliographic Details
Main Author ONOE, KAZUYUKI
Format Patent
LanguageChinese
English
Published 01.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device according to the present invention comprises: a main part which includes a semiconductor substrate, a first type first cladding layer that is provided on the semiconductor substrate and is one of n-type or p-type, an active layer provided on the first cladding layer, and a second type second cladding layer that is provided on the active layer and is the other of n-type or p-type, the main part having a flat part and a mesa part including the active layer formed therein; and a first embedded layer which is a second type and covers the top surface of the flat part and the side surfaces of the mesa part. The first embedded layer has a projecting part on the top surface of a portion that is provided in a region of the top surface of the flat part from the boundary between the mesa part and the flat part to the height of the mesa part.
Bibliography:Application Number: TW20209137607