Semiconductor device and manufacturing method of the same

• Main Authors: LIN, TSUNG-WEI, WU, KUN, WU, CHUN-SHENG
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a manufacturing method of the same are provided. The manufacturing method includes forming at least one hard mask layer and a photoresist on a substrate having a to-be-etched layer, and performing exposure and development using a photomask to make the patterned photoresist have a plurality of first trenches and expose the hard mask layer, wherein the end of each of the first trenches has a width that gradually decreases toward an end point. By using the patterned photoresist as an etching mask, the exposed hard mask layer is removed to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has a plurality of second trenches, and the end of each of the second trenches also has a width that gradually decreases toward an end point. Spacers are then formed on the inner walls of the second trenches, and the hard mask layer is removed so that the to-be-etched layer is exposed. The exposed to-be-etched layer is then removed by using the sp