Bipolar transistor and method for forming the same

A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer. The bipolar transistor also includes a base layer disposed on the collector layer. The bipolar transistor also includes an emitter layer dispo...

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Main Authors TSAI, SHU-HSIAO, CHIU, JUI-PIN, YU, CHIEN-RONG
Format Patent
LanguageChinese
English
Published 16.07.2021
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Abstract A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer. The bipolar transistor also includes a base layer disposed on the collector layer. The bipolar transistor also includes an emitter layer disposed on the base layer. The bipolar transistor further includes a collector electrode disposed directly on a sidewall of the upper sub-collector layer.
AbstractList A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer. The bipolar transistor also includes a base layer disposed on the collector layer. The bipolar transistor also includes an emitter layer disposed on the base layer. The bipolar transistor further includes a collector electrode disposed directly on a sidewall of the upper sub-collector layer.
Author YU, CHIEN-RONG
CHIU, JUI-PIN
TSAI, SHU-HSIAO
Author_xml – fullname: TSAI, SHU-HSIAO
– fullname: CHIU, JUI-PIN
– fullname: YU, CHIEN-RONG
BookMark eNrjYmDJy89L5WQwcsosyM9JLFIoKUrMK84sLskvUkjMS1HITS3JyE9RSANygTg3My9doSQjVaE4MTeVh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRgZGpmbmpg4GhOjBgDC4C3X
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID TW202127544A
GroupedDBID EVB
ID FETCH-epo_espacenet_TW202127544A3
IEDL.DBID EVB
IngestDate Fri Aug 09 05:00:52 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TW202127544A3
Notes Application Number: TW20209118402
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210716&DB=EPODOC&CC=TW&NR=202127544A
ParticipantIDs epo_espacenet_TW202127544A
PublicationCentury 2000
PublicationDate 20210716
PublicationDateYYYYMMDD 2021-07-16
PublicationDate_xml – month: 07
  year: 2021
  text: 20210716
  day: 16
PublicationDecade 2020
PublicationYear 2021
RelatedCompanies WIN SEMICONDUCTORS CORP
RelatedCompanies_xml – name: WIN SEMICONDUCTORS CORP
Score 3.4722235
Snippet A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer....
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Bipolar transistor and method for forming the same
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210716&DB=EPODOC&locale=&CC=TW&NR=202127544A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAVaBoHuNjHQTDZIsdE3SgG04SxBhbJRsmJxsYJlkBr7uzdfPzCPUxCvCNIKJIQu2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqoQXvHwP4LsP2v5uJk6xrg7-LvrObsbBsSruYXBJYzAh325sjMwApqRoPO2XcNcwLtSilArlLcBBnYAoCm5ZUIMTBVZQgzcDrDbl4TZuDwhU54A5nQvFcswmDklFkA6ocqlICqF_DpHgqJeSkKkDugFYCNTxDOBVZFCsBGnUJxYm6qKIOim2uIs4cu0PJ4uE_jQ8IR7jQWY2DJy89LlWBQSEtKMjRKtLBMNUkyNDFNtrC0SEoyTTUC9iYMExPTTI0kGaRwmyOFT1KagQvEAQ1WGprJMLCUFJWmygJr2ZIkOXDwAACOTIB6
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAVaBoHuNjHQTDZIsdE3SgG04SxBhbJRsmJxsYJlkBr7uzdfPzCPUxCvCNIKJIQu2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqoQXvHwP4LsP2v5uJk6xrg7-LvrObsbBsSruYXBJYzAh325sjMwGoO7BKCztl3DXMC7UopQK5S3AQZ2AKApuWVCDEwVWUIM3A6w25eE2bg8IVOeAOZ0LxXLMJg5JRZAOqHKpSAqhfw6R4KiXkpCpA7oBWAjU8QzgVWRQrARp1CcWJuqiiDoptriLOHLtDyeLhP40PCEe40FmNgycvPS5VgUEhLSjI0SrSwTDVJMjQxTbawtEhKMk01AvYmDBMT00yNJBmkcJsjhU9SnoHTI8TXJ97H089bmoELJAEauDQ0k2FgKSkqTZUF1rglSXLgoAIAtkiDZQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Bipolar+transistor+and+method+for+forming+the+same&rft.inventor=TSAI%2C+SHU-HSIAO&rft.inventor=CHIU%2C+JUI-PIN&rft.inventor=YU%2C+CHIEN-RONG&rft.date=2021-07-16&rft.externalDBID=A&rft.externalDocID=TW202127544A