Bipolar transistor and method for forming the same

A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer. The bipolar transistor also includes a base layer disposed on the collector layer. The bipolar transistor also includes an emitter layer dispo...

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Bibliographic Details
Main Authors TSAI, SHU-HSIAO, CHIU, JUI-PIN, YU, CHIEN-RONG
Format Patent
LanguageChinese
English
Published 16.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bipolar transistor includes an upper sub-collector layer. The bipolar transistor also includes a collector layer disposed on the upper sub-collector layer. The bipolar transistor also includes a base layer disposed on the collector layer. The bipolar transistor also includes an emitter layer disposed on the base layer. The bipolar transistor further includes a collector electrode disposed directly on a sidewall of the upper sub-collector layer.
Bibliography:Application Number: TW20209118402