Evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production and phosphorus-doped single-crystal silicon production method using same

• Main Author: WAN, JUN-ZHAO
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BLASTING; CHEMISTRY; CRYSTAL GROWTH; HEATING; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; PIPE-LINE SYSTEMS; PIPE-LINES; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; STORING OF DISTRIBUTING GASES OR LIQUIDS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WEAPONS

An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary chamber being provided above the main chamber; the evacuation method comprises the following steps: S1, sequentially connecting a main valve and a main pump to the main chamber by using a first pipeline, and closing the main valve and the main pump; S2, sequentially connecting an auxiliary valve and an auxiliary pump to the auxiliary chamber by using a second pipeline, and connecting a quick charging valve to the main chamber or the auxiliary chamber by using a third pipeline; opening the auxiliary valve and the auxiliary pump to extract air from the single-crystal furnace, and controlling the quick charging valve to introduce inert gas into the single-crystal furnace. The described evacuation method can gradually