Phase-change memory

A phase-change random access memory (PCRAM) and a method of forming the same are provided. The PCRAM includes a substrate, a first dielectric layer over the substrate, a bottom electrode extending through the first dielectric layer, a first buffer layer over the bottom electrode, a phase-change laye...

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Bibliographic Details
Main Author WU, CHAO-I
Format Patent
LanguageChinese
English
Published 01.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A phase-change random access memory (PCRAM) and a method of forming the same are provided. The PCRAM includes a substrate, a first dielectric layer over the substrate, a bottom electrode extending through the first dielectric layer, a first buffer layer over the bottom electrode, a phase-change layer over the first buffer layer, a top electrode over the phase-change layer, and a second dielectric layer over the first dielectric layer. The second dielectric layer surrounds the phase-change layer and the top electrode. A width of the top electrode is greater than a width of the bottom electrode.
Bibliography:Application Number: TW20209111949