Semiconductor substrate supports with improved high temperature chucking
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also in...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.06.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500 DEG C and a voltage of greater than or about 600 V. |
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Bibliography: | Application Number: TW20209125560 |