Semiconductor structure and method for forming the same

• Main Author: CHUANG, CHE-FU
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor structure including the following steps: providing a substrate; forming a plurality of gate structures on the substrate; forming a lining layer on the substrate and the gate structure; forming a first spacer layer on the lining layer; forming a stopping layer on the first spacer layer; forming a first sacrificial layer on the stopping layer and between the gate structures; removing a portion of the first sacrificial layer such that a top surface of the first sacrificial layer is between upper portions of the gate structures; forming a second spacer layer on the first sacrificial layer and the gate structure; removing a portion of the second spacer layer such that the remaining second spacer layer is between the upper portions of the gate structures; forming a second sacrificial layer on and between the gate structures; removing the second sacrificial layer and a portion of the lining layer, the first spacer layer and the stopping layer to form a plurality of contact openin