Method of fabricating semiconductor device
Methods of fabricating a semiconductor device are provided. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.06.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Methods of fabricating a semiconductor device are provided. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed. |
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Bibliography: | Application Number: TW20209133020 |