Method of fabricating semiconductor device

Methods of fabricating a semiconductor device are provided. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming...

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Main Authors CHIEN, ALLEN HE-NIAN, LEE, TSUNG-HUNG, HUANG, TSAI-YU, DING, CHENG-TING, LEE, CHIENIH, HSIAO, PO-KAI, YEH, CHIHIEH, LIN, SHIH-HAO, YANG, SZUI, LIN, CHIENIH
Format Patent
LanguageChinese
English
Published 01.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of fabricating a semiconductor device are provided. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.
Bibliography:Application Number: TW20209133020