Electrostatic chuck, method of manufacturing electrostatic chuck, and plasma processing apparatus

• Main Authors: TU, LE-YI, WU, DEE, LIANG, JIE, NI, TU-QIANG, YE, RUBIN, ZHAO, HAN-YI, WONG, MANUS
• Format: Patent
• Language: Chinese; English
• Published: 01.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the present disclosure provide an electrostatic chuck, comprising a base and a disc structure disposed on the base, the upper surface of the disc structure being configured to hold a wafer. A first through-hole is formed in the base. A shunt part is formed in the first through-hole to partition the first through-hole into a plurality of sub-through-holes. A filled layer is formed between the shunt part and the sidewall of the first through-hole. A second through-hole is provided in and axially penetrating through the disc structure, the first through-hole communicating with the second through-hole. With such configurations, a cooling gas is enabled to pass through the plurality of sub-through-holes in the first through-hole to the second through-hole, thereby accessing the wafer held on the disc structure to regulate wafer temperature. The filled layer is configurable to fill the sidewall gap between the shunt part and the base, preventing the cooling gas in the first through-hole and the secon