Methods of programming a memory device
A memory device includes a plurality of memory cells arranged in N rows, N being a positive integer. A method includes programming a first row of the N rows; after programming the first row, programming a (2m+1)th row, m being an integer between 1 and N/2-1; and immediately after programming the (2m...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.05.2021
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Subjects | |
Online Access | Get full text |
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