Methods of programming a memory device

A memory device includes a plurality of memory cells arranged in N rows, N being a positive integer. A method includes programming a first row of the N rows; after programming the first row, programming a (2m+1)th row, m being an integer between 1 and N/2-1; and immediately after programming the (2m...

Full description

Saved in:
Bibliographic Details
Main Authors LI, HAIBO, DONG, ZHI-PENG, NAGAVARAPU, VENKATAGIRISH
Format Patent
LanguageChinese
English
Published 01.05.2021
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A memory device includes a plurality of memory cells arranged in N rows, N being a positive integer. A method includes programming a first row of the N rows; after programming the first row, programming a (2m+1)th row, m being an integer between 1 and N/2-1; and immediately after programming the (2m+1)th row, programming a (2m)th row; and after programming an (N-2)th row, programming an Nth row. Even rows closer to the first row are programmed before even rows farther away from the first row.
Bibliography:Application Number: TW20198146699