Methods for processing semiconductor wafers having a polycrystalline finish

A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.

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Bibliographic Details
Main Authors ZHANG, GUOQIANG D, CROOKS, MARK S, RAGAN, TRACY M
Format Patent
LanguageChinese
English
Published 01.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.
Bibliography:Application Number: TW20209141370