Infrared led element

The present invention achieves an infrared LED element which has an emission wavelength of more than 1,000 nm, while having a higher light extraction efficiency than ever before. An infrared LED element according to the present invention comprises: a substrate which contains InP, while having a conc...

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Bibliographic Details
Main Authors SUGIYAMA, TORU, IIZUKA, KAZUYUKI, SASAKI, SHINJI, KINEI, SATOFUMI, NAKAMURA, KAORU
Format Patent
LanguageChinese
English
Published 16.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention achieves an infrared LED element which has an emission wavelength of more than 1,000 nm, while having a higher light extraction efficiency than ever before. An infrared LED element according to the present invention comprises: a substrate which contains InP, while having a concentration of a dopant of a first conductivity type of less than 3 * 1018/cm3; a first semiconductor layer which is formed on top of the substrate, while having the first conductivity type; an active layer which is formed on top of the first semiconductor layer; and a second semiconductor layer which is formed on top of the active layer, while having a second conductivity type that is different from the first conductivity type. This infrared LED element has a main emission wavelength of 1,000 nm or more but less than 1,800 nm.
Bibliography:Application Number: TW20209110551