Source or drain structures with phosphorous and arsenic co-dopants

Integrated circuit structures having source or drain structures with phosphorous and arsenic co-dopants are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate st...

Full description

Saved in:
Bibliographic Details
Main Authors MURTHY, ANAND, KEECH, RYAN, VISHWANATH, SURESH, MINUTILLO, NICHOLAS G
Format Patent
LanguageChinese
English
Published 01.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Integrated circuit structures having source or drain structures with phosphorous and arsenic co-dopants are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The first and second source or drain structures include silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.
Bibliography:Application Number: TW20209105266