Semiconductor material having tunable permittivity and tunable thermal conductivity
A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.02.2021
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Subjects | |
Online Access | Get full text |
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