Semiconductor material having tunable permittivity and tunable thermal conductivity

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over...

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Bibliographic Details
Main Authors PELZEL, RODNEY, CLARK, ANDREW, GOTT, ALAN, NELSONEW, HAMMOND, RICHARD
Format Patent
LanguageChinese
English
Published 01.02.2021
Subjects
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