Semiconductor material having tunable permittivity and tunable thermal conductivity

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over...

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Bibliographic Details
Main Authors PELZEL, RODNEY, CLARK, ANDREW, GOTT, ALAN, NELSONEW, HAMMOND, RICHARD
Format Patent
LanguageChinese
English
Published 01.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.
Bibliography:Application Number: TW20209104558