Semiconductor material having tunable permittivity and tunable thermal conductivity
A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.02.2021
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Subjects | |
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Abstract | A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein. |
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AbstractList | A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein. |
Author | GOTT, ALAN PELZEL, RODNEY HAMMOND, RICHARD NELSONEW CLARK, ANDREW |
Author_xml | – fullname: PELZEL, RODNEY – fullname: CLARK, ANDREW – fullname: GOTT, ALAN – fullname: NELSONEW – fullname: HAMMOND, RICHARD |
BookMark | eNrjYmDJy89L5WQIDk7NzUzOz0spTS7JL1LITSxJLcpMzFHISCzLzEtXKCnNS0zKSVUoSC3KzSwpySzLLKlUSMxLgUuUZABlgOqhRoAV8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-JBwIwMjQwNTc0MLR2Ni1AAANdI7oA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | TW202105718A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_TW202105718A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:16:25 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_TW202105718A3 |
Notes | Application Number: TW20209104558 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210201&DB=EPODOC&CC=TW&NR=202105718A |
ParticipantIDs | epo_espacenet_TW202105718A |
PublicationCentury | 2000 |
PublicationDate | 20210201 |
PublicationDateYYYYMMDD | 2021-02-01 |
PublicationDate_xml | – month: 02 year: 2021 text: 20210201 day: 01 |
PublicationDecade | 2020 |
PublicationYear | 2021 |
RelatedCompanies | IQE PLC |
RelatedCompanies_xml | – name: IQE PLC |
Score | 3.4232655 |
Snippet | A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor material having tunable permittivity and tunable thermal conductivity |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210201&DB=EPODOC&locale=&CC=TW&NR=202105718A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhT1Dedis4PIkjfiqXffSji-sEQ9oGrbm8jTbqpYFq2DsFfb5J2my_6luTCkRy5r-TuAnCnY9d0rRlRHU93hINC1NROdZXamkk1g3qZvNDv9e3ui_k0sSYN-Fjnwsg6oV-yOCLnKML5vZTyutheYoUytnJ5n77zofwhTvxQqb1j4b9w3zjs-NFwEA4CJQj8ZKz0nyuYxQXx4w7sCjNa1NmPXjsiK6X4rVLiI9gbcmysPIbG91sLDoL1z2st2O_VD968WfPe8gRGIxHHnjNRoDVfIG5pysODRJo9m6NyJbOgUCGiW8rqTwiEGd0AhKX3yefXKOSEU7iNoyToqnx10w0ppsl4uxHjDJosZ9k5IIdq2LU4YfHMMDWCPS3zMNVTXcfEdkl2Ae2_8bT_A17CoehUccpX0CwXq-yaq-EyvZH0-wEy6I8W |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhTnG86lTm_KkjfiqXffSji2pWqazdcdXsr6cf8ANOydQj-epO023zRt5A7juTIXe6S-wC4lpChGOosEXRT0qmDkgixFktCqolKKsqpmbEHfT_QvGflYapOG_CxyoVhdUK_WHFEIlEJkfeS6eti84jlsNjKxU38TqbyWze0HL72jqn_Qnxjp2f1R0NnaPO2bYUTPniqYCpRxHdbsK3T6rzUdHrp0ayU4veV4u7DzohQw-UBNL7f2tCyV53X2rDr1x_eZFjL3uIQxmMax55jWqA1n3PE0mSHh6Np9viVK5csC4oraHRLWfWE4BBO1wBq6X0S_JoEQziCK7cf2p5AVhetWRGFk81G5GNo4hxnHeD0VESGShiLZrIiJsgUMxOlUixJKNGMJDuB7t90uv8BL6Hlhf4gGtwHj6ewRwFVzPIZNMv5MjsnV3IZXzBe_gANjpID |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+material+having+tunable+permittivity+and+tunable+thermal+conductivity&rft.inventor=PELZEL%2C+RODNEY&rft.inventor=CLARK%2C+ANDREW&rft.inventor=GOTT%2C+ALAN&rft.inventor=NELSONEW&rft.inventor=HAMMOND%2C+RICHARD&rft.date=2021-02-01&rft.externalDBID=A&rft.externalDocID=TW202105718A |