Pattern formation method and method for manufacturing a semiconductor device

In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Saved in:
Bibliographic Details
Main Authors CHEN, CHIH-HAO, LEE, YIANG, LIN, JIANN-HORNG, SUEN, SHU-HUEI, WU, YING-HAO, TSENG, SHIH-HUA, CHEN, WEN-YEN
Format Patent
LanguageChinese
English
Published 16.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
AbstractList In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
Author LIN, JIANN-HORNG
WU, YING-HAO
LEE, YIANG
SUEN, SHU-HUEI
TSENG, SHIH-HUA
CHEN, CHIH-HAO
CHEN, WEN-YEN
Author_xml – fullname: CHEN, CHIH-HAO
– fullname: LEE, YIANG
– fullname: LIN, JIANN-HORNG
– fullname: SUEN, SHU-HUEI
– fullname: WU, YING-HAO
– fullname: TSENG, SHIH-HUA
– fullname: CHEN, WEN-YEN
BookMark eNqNirsKAjEQAFNo4eP-Yf0AIdw1tiInFhYWB5bHkmw0YHaPZOP3e4X2VjMwszYLFqaVud5QlTJDkJxQozAk0qd4QPY_nRsk5BrQac2RH4BQKEUn7KvTuXp6R0dbswz4KtR8uTG7cz-cLnuaZKQyoSMmHYd7a1vb2YO1x-6f5wP82DgQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID TW202030800A
GroupedDBID EVB
ID FETCH-epo_espacenet_TW202030800A3
IEDL.DBID EVB
IngestDate Fri Jul 19 14:37:48 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TW202030800A3
Notes Application Number: TW20198138001
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200816&DB=EPODOC&CC=TW&NR=202030800A
ParticipantIDs epo_espacenet_TW202030800A
PublicationCentury 2000
PublicationDate 20200816
PublicationDateYYYYMMDD 2020-08-16
PublicationDate_xml – month: 08
  year: 2020
  text: 20200816
  day: 16
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Score 3.4115078
Snippet In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Pattern formation method and method for manufacturing a semiconductor device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200816&DB=EPODOC&locale=&CC=TW&NR=202030800A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD7MKeqbTkXnhQjStyK9ZfahiOuFIW4rUt3eRtOlqGA6bIfgrzcntpsv-pbkQEgCJ-fLSb4vAFcSFPOM0UyXUGGu25bJdTflXLcd12UmBvEc8x3DER082fdTZ9qCt4YLo3RCP5U4ovSoTPp7pfbrxTqJFai3leU1e5VNxW2UeIFWn47xMt-gWtD3wngcjH3N971koo0elc1CdHS3AZsIo1FnP3zuIytl8TukRHuwFcveRLUPra-XDuz4zc9rHdge1hfeslj7XnkAD7GSwhRkxTckP98_k1TMm6K0kfdULJGvoAiIJCUlvn8vBAq7Suuc495wCJdRmPgDXQ5rtlqDWTJZz8A6grYoBD8G4vRSi9rc6bkZKv3lbppLgGXlJssMltObE-j-3U_3P-Mp7GIF06cGPYN29bHk5zL-VuxCLdw3PlOK5w
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1dS8MwFL3MKc43ncqcXxGkb0W2tql9GOLajapbN6S6vY20TVHBdNgOwV9vbuw2X_Qt9EBoAjf35CbnBOBSkmIeRzTWJVVIdNNoc91hnOum5ThRG5N4ivWOYUD9J_N-ak0r8LbUwiif0E9ljigjKpbxXqj1er4uYnnqbmV-Fb3KT9lNP-x4Wrk7xsP8FtW8bqc3HnkjV3PdTjjRgkeFGciObjdg00Z3XqROz11Upcx_p5T-LmyNZW-i2IPK10sdau7y5bU6bA_LA2_ZLGMv34fBWFlhCrLSG5Kf558JE8myKTHyzsQC9QpKgEgYyfH-eybQ2FWiCce14QAu-r3Q9XX5W7PVHMzCyXoExiFURSZ4A4hlM4Oa3LKdGJ3-UoelkmAZaTuKW1FKr4-g-Xc_zf_Ac6j54XAwG9wFD8ewgwCWUlv0BKrFx4KfylxcRGdqEr8B5h2N1A
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Pattern+formation+method+and+method+for+manufacturing+a+semiconductor+device&rft.inventor=CHEN%2C+CHIH-HAO&rft.inventor=LEE%2C+YIANG&rft.inventor=LIN%2C+JIANN-HORNG&rft.inventor=SUEN%2C+SHU-HUEI&rft.inventor=WU%2C+YING-HAO&rft.inventor=TSENG%2C+SHIH-HUA&rft.inventor=CHEN%2C+WEN-YEN&rft.date=2020-08-16&rft.externalDBID=A&rft.externalDocID=TW202030800A