Pattern formation method and method for manufacturing a semiconductor device

In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

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Bibliographic Details
Main Authors CHEN, CHIH-HAO, LEE, YIANG, LIN, JIANN-HORNG, SUEN, SHU-HUEI, WU, YING-HAO, TSENG, SHIH-HUA, CHEN, WEN-YEN
Format Patent
LanguageChinese
English
Published 16.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
Bibliography:Application Number: TW20198138001