Bonded body and acoustic wave element

To securely and stably bond a piezoelectric material substrate onto a support substrate that comprises a metal oxide via a bonding layer that comprises a silicon oxide which has a low oxygen ratio. A bonded body 5, 5A includes a support substrate 1 that comprises a metal oxide, a piezoelectric mater...

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Bibliographic Details
Main Authors TAI, TOMOYOSHI, UNO, YUDAI, GOTO, MASASHI
Format Patent
LanguageChinese
English
Published 16.07.2020
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
RESONATORS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:To securely and stably bond a piezoelectric material substrate onto a support substrate that comprises a metal oxide via a bonding layer that comprises a silicon oxide which has a low oxygen ratio. A bonded body 5, 5A includes a support substrate 1 that comprises a metal oxide, a piezoelectric material substrate 4, 4A, a bonding layer 2B which is provided between the support substrate and the piezoelectric material substrate and which has a composition of Si(1-x)Ox(0.008 ≤ x ≤ 0.408), and an amorphous layer 10 that is provided between the bonding layer and the support substrate. The amorphous layer 10 has an oxygen ratio that is higher than the oxygen ratio of the support substrate 1.
Bibliography:Application Number: TW20198134155