Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

A solid-state imaging device (1) of the present disclosure comprises: a semiconductor layer (51); a light-shielding wall (60b); and an insulation layer. The semiconductor layer (51) is provided with: a plurality of photoelectric conversion units; and a plurality of charge holding units (26) that hol...

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Bibliographic Details
Main Authors IDEKOBA, TOORU, NOUDO, SHINICHIRO, UCHIDA, HIROHISA
Format Patent
LanguageChinese
English
Published 01.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A solid-state imaging device (1) of the present disclosure comprises: a semiconductor layer (51); a light-shielding wall (60b); and an insulation layer. The semiconductor layer (51) is provided with: a plurality of photoelectric conversion units; and a plurality of charge holding units (26) that hold a charge generated by the photoelectric conversion units. The light-shielding wall (60b) is provided inside a groove (51a) of the semiconductor layer (51), the groove being formed in the depth direction from a light incidence side, between a photoelectric conversion unit and a charge holding unit (26) that are adjacent to each other. The insulation layer is provided on a side opposite the light incidence side of the semiconductor layer (51), and has an opening (53a) that surrounds the groove (51a).
Bibliography:Application Number: TW20198139615