Method of manufacturing thin film, thin film and electronic device

• Main Authors: SEOK, JANG-HYEON, AN, JAE-SEOK, NIM, MIN-HYUK, PARK, JUNG-WOO, PARK, JONG-RYUL
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method of manufacturing a silicon-containing thin film, a thin film and an electronic device. The method of manufacturing the silicon-containing thin film is able to be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD), and particularly, to be used in manufacturing a thin film with an excellent quality at a high process temperature.