Transistor having vertical structure and electronic device

• Main Authors: YUN, PIL-SANG, PARK, SE-HEE, NOH, JI-YONG, CHO, IN-TAK, SUNG, SANG-YUN
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active l