Method utilizing using post etch pattern encapsulation

• Main Authors: RALEY, ANGELIQUE, METZ, ANDREW, SUN, JUN-LING, WAJDA, CORY
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A process is provided in which etched layer(s) are protected from residues or defects caused by or resulting from exposure to atmospheric conditions. Protection is provided through the formation of an encapsulation layer post etch. In one embodiment, the encapsulation is provided by a thin layer formed in an atomic layer deposition (ALD) process. The thin layer prevents the etched layer(s) from exposure to air. This encapsulation process may take place after the etch process thus allowing for substrates to be subsequently exposed to atmospheric conditions with little or no queue time constraints being needed for staging subsequent wet clean processing steps. In one embodiment, the encapsulation process may be performed with no vacuum break between the etch process and the encapsulation process. In one embodiment, the encapsulation film is compatible with subsequent wet process steps and can be removed during this wet process steps without adverse effects.