Standard cells

Integrated circuit devices including standard cells are provided. The standard cells may a first vertical field effect transistor (VFET) having a first conductivity type, a second VFET having a second conductivity type, and a third VFET having the first conductivity type. The first VFET may include...

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Bibliographic Details
Main Author DO, JUNG-HO
Format Patent
LanguageChinese
English
Published 16.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Integrated circuit devices including standard cells are provided. The standard cells may a first vertical field effect transistor (VFET) having a first conductivity type, a second VFET having a second conductivity type, and a third VFET having the first conductivity type. The first VFET may include a first channel region protruding from a substrate, and the first channel region has a first length. The second VFET may include a second channel region protruding from the substrate, and the second channel region has a second length. The third VFET may include a third channel region protruding from the substrate. The first channel region, the second channel region, and the third channel region may be spaced apart from each other and may be sequentially arranged along a direction, and the second length may be greater than 1.5 times the first length.
Bibliography:Application Number: TW20198139688