Bonded body and elastic wave element

• Main Authors: TAI, TOMOYOSHI, UNO, YUDAI, GOTO, MASASHI
• Format: Patent
• Language: Chinese; English
• Published: 16.04.2020
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

To improve bonding strength between a support substrate and a piezoelectric single crystal substrate while using a high resistance bonding layer in a bonded body in which a support substrate comprising a single crystal silicon is bonded to a piezoelectric single crystal substrate. Bonded bodies 5, 5A include: piezoelectric single crystal substrates 4, 4A; a support substrate 1 comprising a single crystal silicon; a bonding layer 2A which is provided between the support substrate 1 and the piezoelectric single crystal substrates 4, 4A, and has a composition of Si(1-x)Ox(0.008 ≤ x ≤ 0.408); and a non-crystalline layer 8 which is provided between the support substrate 1 and the bonding layer 2A and comprises silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in the non-crystalline layer 8 at an end facing the bonding layer 2A is higher than the average concentration of the oxygen atoms in the bonding layer 2A.