Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacke...

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Main Authors MATSUSHITA, DAISUKE, KIDO, NOZOMI, KUGE, NOBUHITO, KAGI, YUI, KAJINO, TOMONORI, FUJISHIMA, TATSUYA, SHISHIDO, MASAYUKI
Format Patent
LanguageChinese
English
Published 01.03.2020
Subjects
ELECTRICITY
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Summary:According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacked body, and a semiconductor layer, a first insulating layer, a charge accumulation layer, and a second insulating layer, which are stacked on a side surface of the pillar in order from the pillar, wherein the semiconductor layer has an average grain size that is larger on a side nearer to the pillar and is smaller on a side nearer to the first insulating layer.
Bibliography:Application Number: TW20198106642