A pixel sensor, method for forming same and an image sensor

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetect...

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Bibliographic Details
Main Authors HUANG, YI-MIN, WANG, CHEN-JONG, HUNG, FENGI, CHANG, CHUN-WEI, SHIU, FENG-JIA, YAUNG, DUN-NIAN, SZE, JHY-JYI, TAKAHASHI, SEIJI, HSU, WEING, WU, WEIUANG, LIU, JENNG
Format Patent
LanguageChinese
English
Published 16.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
Bibliography:Application Number: TW20187137391