Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance

Methods are disclosed that selectively deposit a protective material on the top regions of patterned photoresist layers, such patterned EUV photoresist layers, to provide a protective cap that reduces erosion damage during etch processes used for pattern transfer. Some deposition of the protective m...

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Bibliographic Details
Main Authors HULI, LIOR, CHAE, SOO-DOO, PARK, WAN-JAE, O'MEARA, DAVID
Format Patent
LanguageChinese
English
Published 01.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods are disclosed that selectively deposit a protective material on the top regions of patterned photoresist layers, such patterned EUV photoresist layers, to provide a protective cap that reduces erosion damage during etch processes used for pattern transfer. Some deposition of the protective material on the sidewalls of the patterned photoresist layer is acceptable, and any deposition of the protective material on the underlying layer below the patterned photoresist layer is preferably thinner than the deposition at the top of the photoresist pattern. Further, the selective deposition of protective caps can be implemented, for example, through the application of high-rotation speeds to spatial atomic layer deposition (ALD) techniques. The selective deposition of protective caps increases the flexibility of options to improve etch resistance for various processes/materials.
Bibliography:Application Number: TW20198121964