Wafer processing system with flow extender

• Main Authors: BAGCHI, ANIRUDDHA, MITROVIC, BOJAN, CHANG, CHENGHUNG PAUL, GURARY, ALEXANDER
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Wafer processing systems and ring flow extenders used in those systems, the flow extender being proximate and around the peripheral edge of the wafer carrier. The ring flow extender has a top surface facing in the upstream direction, the ring being constructed and arranged so that when the reactor is in an operative condition, the ring closely surrounds the wafer carrier and the top surface of the ring is substantially planar and/or continuous with the top surface of the carrier. The ring flow extender has an outer peripheral surface that includes a radiused portion at or proximate to the top surface of the ring.