Method for predicting the amount of warpage of silicon wafer and method for manufacturing a silicon wafer

• Main Authors: TAKATA, KOUSUKE, KO, BONG-GYUN
• Format: Patent
• Language: Chinese; English
• Published: 16.09.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CALCULATING; CHEMISTRY; COMPUTING; COUNTING; CRYSTAL GROWTH; ELECTRIC DIGITAL DATA PROCESSING; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a method for predicting the amount of warpage occurring when applying a heat treatment to silicon wafer, and a method of manufacturing a silicon wafer with consideration of the influence of oxygen. The predicting method comprises using the strain change rate and the movable dislocation density change rate of the silicon wafer in the heat treatment to determine the temporal variation of the movable dislocation density, stress, and strain as warpage amounts. Based on the temporal variation of the strain, the amount of the deformation of the silica wafer is determined. The movable dislocation density Ni at the start of the above heat treatment can be represented by the following formula, wherein A and L0 are constants, [Delta]Oi is the oxygen concentration used in the oxygen precipitates in the silica wafer at the start of the above heat treatment, and L is the average size of the oxygen precipitates in the silica wafer at the start of the above heat treatment. Ni=A*([Delta]Oi*L-Lo)2.5.