1-1 forced fin stack inverter and method of forming fin forced stack inverter

A method of forming a fin forced stack inverter includes the following steps. A substrate including a first fin, a second fin and a third fin across a first active area along a first direction is provided, wherein the first fin, the second fin and the third fin are arranged side by side. A fin remov...

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Bibliographic Details
Main Authors LEE, KUO-HSING, KANG, CHIH-KAI, SHENG, YIUNG, HSUEH, SHENG-YUAN
Format Patent
LanguageChinese
English
Published 01.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A method of forming a fin forced stack inverter includes the following steps. A substrate including a first fin, a second fin and a third fin across a first active area along a first direction is provided, wherein the first fin, the second fin and the third fin are arranged side by side. A fin remove inside active process is performed to remove at least a part of the second fin in the first active area. A first gate is formed across the first fin and the third fin in the first active area along a second direction. The present invention also provides a 1-1 forced fin stack inverter formed by said method.
Bibliography:Application Number: TW20187104758