P-type field effect transistor and method for fabricating the same
A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and th...
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| Main Authors | , , , , , , , , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
01.08.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure. |
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| AbstractList | A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure. |
| Author | LIU, SHI-YOU WU, CHIHIANG CHEN, TI-BIN HSIAO, YA-YIN CHEN, SHAO-PING YU, CHIEN-WEN MA, HUANI LIU, YUUN WEN, TSAI-YU LI, CHING-I |
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| Notes | Application Number: TW20187101053 |
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| Snippet | A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | P-type field effect transistor and method for fabricating the same |
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