P-type field effect transistor and method for fabricating the same

A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and th...

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Bibliographic Details
Main Authors WEN, TSAI-YU, HSIAO, YA-YIN, CHEN, TI-BIN, YU, CHIEN-WEN, MA, HUANI, WU, CHIHIANG, LIU, YUUN, LI, CHING-I, LIU, SHI-YOU, CHEN, SHAO-PING
Format Patent
LanguageChinese
English
Published 01.08.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.
Bibliography:Application Number: TW20187101053