Silicon carbide epitaxial wafer and process for producing same

Silicon Carbide Epitaxial Wafer and Process for Producing Same are disclosed. The method for producing the silicon carbide epitaxial wafer includes steps of: providing a substrate; forming a first buffer layer on the substrate, and forming a second buffer layer and a lateral protection layer on the...

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Bibliographic Details
Main Authors LIU, JIA-ZH, CHEN, MIIN-JANG, SHIH, YING-RU, LIU, CHE-MING
Format Patent
LanguageChinese
English
Published 16.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Silicon Carbide Epitaxial Wafer and Process for Producing Same are disclosed. The method for producing the silicon carbide epitaxial wafer includes steps of: providing a substrate; forming a first buffer layer on the substrate, and forming a second buffer layer and a lateral protection layer on the first buffer layer, wherein the lateral protection layer covers a sidewall surface of the first buffer layer and is formed of a material different from that of the first buffer layer, which could prevent the first buffer layer from being corroded by processing gas used in a following epitaxial process.
Bibliography:Application Number: TW20176144572