Ferroelectric assemblies and methods of forming ferroelectric assemblies

Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal...

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Bibliographic Details
Main Authors SIDDIK, MANZAR, LIAO, ALBERT
Format Patent
LanguageChinese
English
Published 16.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 Å. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.
Bibliography:Application Number: TW20187144920