Thin film transistor substrate and manufacturing method thereof

• Main Authors: CHEN, FA-HSYANG, WU, YEN-YU, LIN, SHIH-LIANG
• Format: Patent
• Language: Chinese; English
• Published: 01.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A method of manufacturing a thin film transistor includes following steps. A semiconductor layer on a substrate is formed. A first insulating layer is formed to cover the semiconductor layer. A first conductive layer is formed on the first insulating layer, wherein the first insulating layer is located between the first conductive layer and the semiconductor layer. A first hydrogenation plasma processing process for the semiconductor layer after the first insulating layer is formed and before the first conductive layer is formed. A second conductive layer is formed on the substrate layer, wherein the second conductive layer is electrically connected to the semiconductor layer. Moreover, the thin film transistor formed by the method is also provided.