Method for correcting memory device and memory device

A method for correcting memory device and a memory device are disclosed. The method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N-1 groups and the plurality of parity b...

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Bibliographic Details
Main Authors LIU, CHIEN-YIN, YANG, HSUEHIH, CHEN, JONATHAN TE-HAN, CHIH, YU-DER, CHEN, KUANUN
Format Patent
LanguageChinese
English
Published 01.07.2019
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method for correcting memory device and a memory device are disclosed. The method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N-1 groups and the plurality of parity bits form a first group different from the N-1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N-1 groups; and providing a second word comprising updated data bits that form a second one of the N-1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N-1 groups.
Bibliography:Application Number: TW20187123091