Polyimide precursor and lithography pattern formed by the same

The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represe...

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Main Authors CHEN, CHI-SHIAN, LIAO, YU-FU, CHEN, CHIAO-PEI, LIN, SHIHANG, CHEN, CHEN-NI, TSAI, BIN-LING, HUNG, TSUNG-TAI, CHEN, CHIU-FENG, CHEN, YU-PEI
Format Patent
LanguageChinese
English
Published 01.07.2019
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Summary:The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 respectively represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.
Bibliography:Application Number: TW20170141056