Polyimide precursor and lithography pattern formed by the same
The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represe...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.07.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 respectively represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability. |
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Bibliography: | Application Number: TW20170141056 |