Determining a critical dimension variation of a pattern

A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of i...

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Bibliographic Details
Main Authors VERESCHAGIN, VADIM, COHEN, BOAZ, KRIS, ROMAN, SHKALIM, ARIEL, SCHWARZBAND, ISHAI, BAL, EVGENY
Format Patent
LanguageChinese
English
Published 16.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.
Bibliography:Application Number: TW20187134766